| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a FET sensor capable of realizing the significant improvement of a measurement sensitivity and accuracy while making the entire sensor into a solid-state and reducing in size and in cost without using a liquid-junction type comparison electrode and a reference solution. <P>SOLUTION: The FET sensor is constituted by forming a p-type ISFET 11 and an n-type ISFET 12 which have a complementary characteristic and a pseudo comparison electrode 13 in a lateral arrangement relationship on an one chip substrate 2. The FET sensor is constituted to detect electrical potentials between the pseudo comparison electrode 13 and the ISFET 11, and ISFET 12 respectively when gate parts of the p-type ISFET 11 and the n-type ISFET 12 are concurrently contacted to a measured object so that an ion concentration is output by arithmetic processing of a difference of those detected electrical potentials. <P>COPYRIGHT: (C)2008,JPO&INPIT |
