METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having good bondability between a copper film and a base film thereof and having small resistance between wirings. SOLUTION: A substrate (wafer W) having a trench 100 formed on a porous insulating layer (SiOC film 11) containing absorbed moisture in the air is placed in a processing chamber, and the substrate is coated with a first base film (Ti film 13) made of a bubble metal. The surface of the first base film contacting the insulating layer is oxidized by the moisture emitted from the insulating layer to form a passivation film 13a. Meanwhile, the surface of the first base film is coated on a second base film made of a nitride or carbide of the bubble metal, and a copper film 15 is formed on the surface thereof by CVD using a copper organic compound as a material. COPYRIGHT: (C)2008,JPO&INPIT