| 摘要 |
A selective oxidation process is performed on a gate electrode in a plasma processing apparatus 100. A wafer W with the gate electrode formed thereon is placed on a susceptor 2 within a chamber 1. Ar gas, H<SUB>2 </SUB>gas, and O<SUB>2 </SUB>gas are supplied from an Ar gas supply source 17, an H<SUB>2 </SUB>gas supply source 18, and an O<SUB>2 </SUB>gas supply source 19 in a gas supply system 16 through a gas feed member 15 into the chamber 1. At this time, a flow rate ratio H<SUB>2</SUB>/O<SUB>2 </SUB>of H<SUB>2 </SUB>gas relative to O<SUB>2 </SUB>gas is set to be 1.5 or more and 20 or less, preferably to be 4 or more, and more preferably to be 8 or more. Further, the pressure inside the chamber is set to be 3 to 700 Pa, such as 6.7 Pa (50 mTorr).
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