发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING BURIED GATES AND RELATED SEMICONDUCTOR DEVICES |
摘要 |
Methods of fabricating semiconductor devices capable of maintaining a liner on both sidewalls of an active region overlapping a gate are provided. An isolation trench defining an active region is formed in a semiconductor substrate. A liner is formed on sidewalls of the active region. An isolation layer filling the isolation trench is formed. A hard mask pattern is formed on the semiconductor substrate having the liner and the isolation layer. A gate trench crossing the active region is formed using the hard mask pattern as an etching mask. A gate is formed in the gate trench. After forming the gate, the hard mask pattern is removed. A gate capping pattern is formed on the gate.
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申请公布号 |
US2008029810(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20060563365 |
申请日期 |
2006.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM BONG SOO;KIM YUN-GI;SEO HYEOUNG-WON |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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