发明名称 MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME
摘要 <p>In a liquid immersion lithography process, the present invention enables to prevent deterioration of a resist film during liquid immersion exposure using water or other various immersion liquids and deterioration of the immersion liquid used therein at the same time and also enables to improve post exposure resistance of the resist film without increasing the number of process steps. Consequently, there can be formed a high-resolution resist pattern by liquid immersion lithography. Specifically, a protective film is formed on the surface of a resist film using a composition containing at least an alkali-soluble polymer, a crosslinking agent and a solvent which can dissolve the polymer and crosslinking agent.</p>
申请公布号 WO2006011607(A8) 申请公布日期 2008.02.07
申请号 WO2005JP13976 申请日期 2005.07.29
申请人 TOKYO OHKA KOGYO CO., LTD.;ISHIZUKA, KEITA;ENDO, KOTARO;HIRANO, TOMOYUKI 发明人 ISHIZUKA, KEITA;ENDO, KOTARO;HIRANO, TOMOYUKI
分类号 G03F7/11;G03F7/039;G03F7/20;G03F7/38;H01L21/027 主分类号 G03F7/11
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