| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device avoiding the problem of causing etch stop owing to reduced aperture diameters and the problem of increased contact resistance owing to reduced contact areas caused by the tapered bottom part in the case of forming a through hole by dry-etching a thick insulating film. SOLUTION: At the position of forming a hole, a pedestal 141 that can be etched only by oxygen and hydrogen plasma is formed beforehand, and an interlayer insulating film 142 is formed on it. The interlayer insulating film on the pedestal is etched by fluorine-containing plasma to form a hole 147a, and the surface of the pedestal is exposed. After that, oxygen plasma is used to etch the pedestal. For the pedestal, an amorphous carbon film and an organic coated film can be used. COPYRIGHT: (C)2008,JPO&INPIT
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