发明名称 |
Method of forming a film at low temperature for a semiconductor device |
摘要 |
A P-type impurity layer, a silicon monocrystal film, a silicon oxide film and a crystal silicon film are successively formed on a semiconductor substrate by introducing appropriate functional gases on the semiconductor substrate, while irradiating the semiconductor substrate with ionizing radiation or light at a temperature lower than 250 DEG C. After forming a photoresist on the crystal silicon film at a temperature lower than 250 DEG C, the resultant semiconductor substrate is subjected to etching by using the photoresist as a mask, so as to form a gate electrode B out of the silicon oxide film and a gate insulating film out of the silicon oxide film. Then, the resultant semiconductor substrate is subjected to etching again by using the gate electrode as a mask, so as to form a channel region out of the P-type impurity layer. A source electrode and a drain electrode are formed on the respective sides of the gate electrode on the semiconductor substrate by introducing an appropriate functional gas, while irradiating the semiconductor substrate with ionizing radiation or light at a temperature lower than 250 DEG C. <IMAGE> |
申请公布号 |
EP0684632(B1) |
申请公布日期 |
2007.12.12 |
申请号 |
EP19950107485 |
申请日期 |
1995.05.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
MIZUNO, BUNJI;OKADA, KENJI;NAKAYAMA, ICHIROU |
分类号 |
H01L21/205;C23C16/48;H01L21/285;H01L21/316;H01L21/318;H01L21/336 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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