ARF PHOTORESIST COMPOUND AND METHOD OF FORMING A PATTERN USING THE SAME

摘要

An ArF photoresist composition is provided to have excellent solubility in a developer when a photoresist pattern is formed, and form an ArF photoresist pattern having an uniform upside without photoresist residues. An ArF photoresist composition comprises 10-15wt% of a methacrylate resin containing a methacrylate monomer with an adamantyl group having at least one carboxyl group at the terminal, 1.0-1.5wt% of a photo-acid generator which reacts with a light to generate an acid, and the balance of solvent. A method for forming an ArF photoresist pattern includes the steps of: (S110) preparing the ArF photoresist composition; (S120) applying the ArF photoresist composition on a substrate to form a photoresist layer; (S130) selectively exposing the photoresist layer to a light having an ArF wavelength; and (S150) developing the exposed photoresist layer to form an ArF photoresist pattern.