| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method for achieving both high selectiveness and a high etching rate. SOLUTION: A photoresist film 102 is used as a mask, and an SiO<SB>2</SB>film 101 is etched selectively by plasma relative to the photoresist film 102 to form holes 104. In the plasma etching, a process gas is used at least containing an unsaturated first carbon fluoride gas, a straight chain saturated second carbon fluoride gas expressed as C<SB>m</SB>F<SB>2m+2</SB>(m=5, 6), and an oxygen gas, and plasma is generated from the process gas. COPYRIGHT: (C)2007,JPO&INPIT
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