| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitrogen-doped and annealed wafer in which the outermost layer is free of defects, sufficient gettering sites such as an oxygen deposit exist on a bulk portion, has superior gettering ability, and dopant contamination on the outermost layer is reduced to a very low level. SOLUTION: The method of manufacturing the nitrogen-doped and annealed wafer comprises the steps of growing at least a nitrogen-doped silicon monocrystal by Czochralski method; slicing the grown silicon monocrystal into silicon monocrystal wafers; thermally processing the sliced silicon monocrystal wafers under the atmosphere containing one or more of hydrogen gas and inert gas; and removing the regions in which a contaminated dopant has diffused from the wafer surface during the thermal processing, by mirror-polishing the thermally processed silicon monocrystal wafers. COPYRIGHT: (C)2007,JPO&INPIT
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