| 摘要 |
PROBLEM TO BE SOLVED: To implement a diagnostic method of a shunt ratio of a process gas shunt resistor by measuring and comparing a gas flow rate introduced to a treatment chamber from a pressure variation of the treatment chamber by using a gas flow rate controller for calibration and a gas flow rate controller for process gas in a semiconductor manufacturing device which shunts the process gas and introduces it to the treatment chamber. SOLUTION: Process gas is branched through a shunt resistor 10 from a gas supply source 1-1 for supplying the process gas and supplied to a treatment chamber 7. Calibration gas is supplied from a gas supply source 1-2 for supplying calibration gas to the treatment chamber 7, and a calibration gas flow rate is measured by a pressure variation. The shunt rate of the process gas is set by a shunt resistor 10. While supplying the process gas from one gas line to the treatment chamber 7, the other gas line is evacuated. The shunt rate is subjected to diagnosis by calculating the gas flow rate of each gas line which is shunted by the shunt resistor 10 by replacing the discharged process gas with calibration gas and measuring and comparing the pressure variation of the treatment chamber 7. COPYRIGHT: (C)2007,JPO&INPIT
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