INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide an insulated gate semiconductor device having a high withstand voltage and a good on-resistance characteristic upon AC operation, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device 100 has a P-body region 41 and an N-drift region 12 in this order from the top face thereof. Further, a gate trench 21 and a termination trench 62 penetrating through the P-body region 41 are formed. The bottoms of respective trenches are surrounded by P diffusion regions 51, 53. The gate trench 21 has a built-in gate electrode 22 therein. Further, a P--diffusion region 52 having a concentration lower than that of the P-body region 41, and the P diffusion regions 51 is formed to be in contact with the end of the gate trench 21 in the longitudinal direction thereof. The P--diffusion region 52 is depleted before the P diffusion region 51 upon OFF of the gate voltage. Further, the P--diffusion region 52 becomes a hole supplying path to the P diffusion region 51 upon turning-on of the gate voltage. COPYRIGHT: (C)2007,JPO&INPIT