| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor device which can suppress variations in the performance of the thin-film transistor, and also a method of manufacturing the transistor device. SOLUTION: The thin-film transistor device comprises a thin-film transistor having a silicon layer 2, including a source region 2a, a drain region 2b, and a channel region 2c on an insulating substrate 1 a gate insulating layer 3, and a gate electrode 4; an interlayer insulating layer 5 covering the thin-film transistor; and wiring lines 7 electrically connected to the source region 2a, the drain region 2b, and the gate electrode 4 through contact holes 6 provided in the interlayer insulating layer 5. The transistor device also comprises a first upper insulating layer 8a covering the wiring lines 7 and the interlayer insulating layer 5 for smoothing the irregular surfaces of the wiring lines 7 and the interlayer insulating layer 5, and a second upper insulating layer 8b covering the first upper insulating layer 8a. The second upper insulating layer 8b is smaller in hydrogen diffusion coefficient than the first upper insulating layer 8a. COPYRIGHT: (C)2007,JPO&INPIT |
