| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a thin silicon germanium conducting channel under the gate stack of a semiconductor device. SOLUTION: In the method of forming the silicon germanium conducting channel 18 under the gate stack 6 of the semiconductor device, comprises the steps of forming a gate stack 6 on a silicon film on an insulating film, growing a silicon germanium film on the silicon film, and forming a silicon germanium conducting channel 18 between the gate stack 6 and the insulating film 2 by heating a semiconductor device and diffusing germanium in the silicon film. COPYRIGHT: (C)2007,JPO&INPIT
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