| 摘要 |
<p>A plasma etching method and a computer-readable storage medium are provided to form deposits on an etching sidewall by supplying a high frequency power to a first or a second electrode to generate a plasma and applying a DC voltage to any one of the electrodes. A structure having a plasma-etched low-k film is disposed in a processing chamber(10) having first and second electrodes(34,16) which face each other. A processing gas containing NF3 is introduced into the processing chamber. A high-frequency power is applied to one of the first and the second electrodes to generate a plasma, and a DC voltage is applied to one of the electrodes. An absolute value of the DC voltage is greater than or equal to 400 V.</p> |
