发明名称 |
MONOS type nonvolatile memory cell, nonvolatile memory, and manufacturing method thereof |
摘要 |
A MONOS type nonvolatile memory cell is structured such that a laminated insulating film which is formed by sequentially laminating a tunnel insulating layer, a charge storage insulating layer, and a charge block insulating layer is provided on a convex curved surface portion of a semiconductor substrate, and a control gate electrode is further formed thereon. A thickness of the tunnel insulating layer is set to be 4 to 10 nm, and data writing/data erasing operations are carried out by making an F-N tunneling current flow in the tunnel insulating layer.
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申请公布号 |
US2007200168(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070706999 |
申请日期 |
2007.02.16 |
申请人 |
OZAWA YOSHIO;TSUNASHIMA YOSHITAKA |
发明人 |
OZAWA YOSHIO;TSUNASHIMA YOSHITAKA |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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