| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which a good resist pattern can be formed. <P>SOLUTION: The method for producing a semiconductor device 100 includes a preparation process S1, a first layer forming process S2, a second layer forming process S3, a continuous hole forming process S4 and an application process S105. At the preparation process S1, a semiconductor substrate 3 is prepared. At the first layer forming process S2, a first layer 10 is formed on the semiconductor substrate 3 in such a way so as to enclose a hollow portion 11. At the second layer forming process S3, a second layer 20 is formed on the first layer 10 and on the hollow portion 11. At the continuous hole forming process S4, a portion of the second layer 20 located on the hollow portion 11 is partly opened to form a plurality of continuous holes 40a. The continuous holes 40a communicate a space on the second layer 20 with the hollow portion 11. At the application process S105, a first resist 150 is applied on the second layer 20 in such a way as to fill in the plurality of continuous holes 40a. The first resist 150 consists mainly of a first material. The first material has a larger elastic modulus than novolac resin. <P>COPYRIGHT: (C)2007,JPO&INPIT |
