| 摘要 |
In an element for a MOS type solid-state imaging device, a leakage current caused by a stress generated in a vicinity of an element isolation region having an STI structure is reduced. The element for the MOS type solid-state imaging device comprises: a signal accumulation region 102, of a second conductivity type, provided in an interior of a semiconductor substrate or well 101 of a first conductivity type, for accumulating a signal charge generated by performing photoelectric convention; agate electrode 104 provided on the semiconductor substrate or well 101; a drain region 105, of a second conductivity type, provided on a surface portion, of the semiconductor substrate or well 101, on which the gate electrode is formed; and an element isolation region 201 provided on the surface portion, of the semiconductor substrate or well 101, on which the gate electrode is formed. The element isolation region 201 has the STI structure, and a cavity 202 is formed in an interior of the element isolation region 201.
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