| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical-cavity light emitting diode as well as its manufacturing method capable of providing a high output with a low forward voltage by improving current constriction effect. <P>SOLUTION: The vertical-cavity light emitting diode 1 comprises a first conductive type reflection layer 3 formed on a substrate 2, a first conductive type cladding layer 4 formed on it, an active layer 5 formed on it, a second conductive type cladding layer 6 formed on it, a second conductive type stop layer 24 formed on it, a current constriction layer 9 formed on it to comprise an opening, a second conductive type reflection layer 10 formed in the opening of the current constriction layer above the opening and on the current constriction layer comprising the opening, and an electrode layer 17 formed on the second conductive reflection layer on the current constriction layer. The etching stop layer is Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>P (where, 0≤x≤0.1, 0≤y≤1, and 0≤x+y≤1). <P>COPYRIGHT: (C)2007,JPO&INPIT |
