| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor non-volatile storage element and its manufacturing method for suppressing the deterioration of read currents due to bit interference in a semiconductor non-volatile storage element for storing two bits at the physically separated places of one element. SOLUTION: This semiconductor nonvolatile memory element is provided with a semiconductor substrate 1; a first diffusion layer region 10, and a second diffusion layer region 11 formed in the semiconductor substrate 1; a channel region formed in the semiconductor substrate 1, and formed between the first diffusion layer region 10 and the second diffusion layer region 11; a first insulating film 5 formed on the channel region; a charge storage region 6 formed on the first insulating film 5; a second insulating film 7 formed on the charge storage region 6; and a gate electrode 8 formed on the second insulating film 7. The maximum dimension of the overlapped section with the gate electrode 8 to a depthwise direction in the first diffusion layer region 10 and the second diffusion layer region 11 is made larger than the half of the dimension of the gate electrode, in a direction in parallel with the direction connecting the first diffusion layer region and the second diffusion layer region. COPYRIGHT: (C)2007,JPO&INPIT
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