发明名称 Method for manufacturing semiconductor module using interconnection structure
摘要 In a method for manufacturing a semiconductor module, a metal layer is formed on a support substrate. Then, first conductive posts and a first insulating layer are formed on the metal layer. The first insulating layer surrounds the sides of the first conductive posts. Then, second conductive posts are formed above the first conductive posts. The second conductive posts are electrically connected to the first conductive posts. Then, a second insulating layer is formed so as to cover the second conductive posts. The second insulating layer is made of adhesive resin. Finally, a semiconductor device is adhered to the second conductive posts by the second insulating layer while a gap between the first semiconductor device and the first insulating layer is sealed by the second insulating layer.
申请公布号 US2007086166(A1) 申请公布日期 2007.04.19
申请号 US20060580869 申请日期 2006.10.16
申请人 NEC ELECTRONICS CORPORATION 发明人 KURITA YOICHIRO;SOEJIMA KOJI;KAWANO MASAYA
分类号 H05K7/20 主分类号 H05K7/20
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