发明名称 METHOD FOR MANUFACTURING WAFER LEVEL SEMICONDUCTOR DEVICE FORMED PROTECTING LAYER
摘要 A method for manufacturing a wafer level semiconductor device is provided to simplify manufacturing processes and to reduce remarkably a protection layer forming time by forming a protection layer around a semiconductor chip using a screen printing process. A plurality of semiconductor chips are formed on a wafer(10). A groove is formed between adjacent semiconductor chips by performing a first sawing process on a rear surface of the wafer. A screen printing process is performed on the rear surface of the wafer to form a protection layer(40) capable of filling completely the groove. The resultant structure is then divided into discrete semiconductor devices by performing a second sawing process along the protection layer of the groove.
申请公布号 KR100679684(B1) 申请公布日期 2007.01.31
申请号 KR20060015214 申请日期 2006.02.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOUN, HAN SHIN;MOK, SEUNG KON;JUNG, YOUNG DOO
分类号 H01L23/02 主分类号 H01L23/02
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