PEROVSKITE-BASED THIN FILM STRUCTURES ON MISCUT SEMICONDUCTOR SUBSTRATES

摘要

A perovskite-based thin film structure includes a semiconductor substrate layer, such as a crystalline silicon layer, having a top surface cut at an angle to the (001) crystal plane of the crystalline silicon. A perovskite seed layer is epitaxially grown on the top surface of the substrate layer. An overlayer of perovskite material is epitaxially grown above the seed layer. In some embodiments the perovskite overlayer is a piezoelectric layer grown to a thickness of at least 0.5 µm and having a substantially pure perovskite crystal structure, preferably substantially free of pyrochlore phase, resulting in large improvements in piezoelectric characteristics as compared to conventional thin film piezoelectric materials.