| 摘要 |
PROBLEM TO BE SOLVED: To reduce a cost for manufacturing a semiconductor device provided with a diode. SOLUTION: The semiconductor device has a semiconductor substrate 2, an epitaxial layer 3 formed on the principal plane of the substrate 2, an n-type semiconductor layer 4a and a p-type semiconductor layer 5 formed on the layer 3, and a pn composition plane 6 formed between the layer 4a and the layer 5. The surface of the substrate 2 is formed in irregularity by etching, the epitaxial layer 3 is formed with its surface formed by allowing epitaxial growth to be performed on the principal plane of the substrate 2, the pn-composition plane 6 of the layer 4a and the layer 5 formed by ion implanting n-type and p-type impurities from the surface of the layer 3 is formed into irregularity. COPYRIGHT: (C)2007,JPO&INPIT
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