| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposited film by a plasma CVD method having gas barrier properties and adhesiveness to a base material, and further having excellent heat resistance. SOLUTION: In the vapor deposited film by a plasma CVD method using an organic metal compound and an oxidizing gas, the vapor deposited film has an organic-inorganic composite region Y located in the side of a base material and an inorganic region X formed on the organic-inorganic composite region Y. With respect to the element standards of a metal element (M), oxygen (O) and carbon (C), in the organic-inorganic composite region Y, the elemental ratio (C/M) and the elemental ratio (O/M) satisfy 0.2<C/M<1.8, and 1.5≤O/M, and also, the bond energy of the metal element (M) lies in a range lower by 0.1 to 0.7 eV than the average value of the metal element (M) having a carbon concentration of <5% in the inorganic region. In the inorganic region X, the element ratio (C/M) satisfies C/M≤0.2. COPYRIGHT: (C)2007,JPO&INPIT
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