| 摘要 |
A semiconductor memory includes a semiconductor region, floating gate electrodes arranged in a matrix on the semiconductor region through a tunnel insulating layer, inter-gate insulating layers disposed only on the plurality of floating gate electrodes, respectively, control gate electrodes disposed on the plurality of inter-gate insulating layers, respectively, and isolation insulators extending between arrangements of the control gate electrodes along a column direction of the matrix, each of the isolation insulators penetrating into the semiconductor region so as to electrically isolate the inter-gate insulating layers from each other in the column direction.
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