发明名称 |
Method for fabricating LED |
摘要 |
A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.
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申请公布号 |
US2006286694(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060455839 |
申请日期 |
2006.06.20 |
申请人 |
UNIT LIGHT TECHNOLOGY INC. |
发明人 |
WU BOR-JEN;WU MEI-HUI;CHANG KEN KAI-FU;CHEN CHIEN-AN;CHANG YUAN-HSIAO;YEH LI-SHEI |
分类号 |
H01L21/00;H01L33/28;H01L33/30;H01L33/34;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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