发明名称 CATALYTICALLY GROWN NANO-BENT NANOSTRUCTURE AND METHOD FOR MAKING THE SAME
摘要 <p>Elongated nanostructures and a method of fabricating elongated nanostructures with one or more sharp bends using a plasma enhanced chemical vapor deposition process comprising placing an anode above the nanostructure and a cathode below the nanostructure, applying a voltage between the anode and cathode to create electric field lines, and changing the direction of the electric field lines during the fabrication of the nanostructure. Device applications using such structures are also disclosed.</p>
申请公布号 WO2006135375(A2) 申请公布日期 2006.12.21
申请号 WO2005US25763 申请日期 2005.07.20
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JIN, SUNGHO;CHEN, LI-HAN;AUBUCHON, JOSEPH, F. 发明人 JIN, SUNGHO;CHEN, LI-HAN;AUBUCHON, JOSEPH, F.
分类号 G01J4/00 主分类号 G01J4/00
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