发明名称 |
Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon |
摘要 |
Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
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申请公布号 |
US2006223333(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20050099081 |
申请日期 |
2005.04.05 |
申请人 |
LI MING;CUNNINGHAM KEVIN;PANAYIL SHEEBA;XING GUANGCAI;IYER R S |
发明人 |
LI MING;CUNNINGHAM KEVIN;PANAYIL SHEEBA;XING GUANGCAI;IYER R. S. |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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