发明名称 |
Group III-nitride light emitting device |
摘要 |
The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO<SUB>2 </SUB>layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
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申请公布号 |
US2006220057(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20050315150 |
申请日期 |
2005.12.23 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SHIM HYUN W.;YOON SUK K.;RO JAE C.;CHAE SEUNG W. |
分类号 |
H01L33/32;H01L33/42;H01L33/62 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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