SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device 90 in which migration is restrained from occurring. SOLUTION: The method of manufacturing a semiconductor device 90 comprises processes of: forming a projection 30 containing two or more resin projections 12 and an intermediate 32 located between them apart from two or more electrodes 22; forming two or more conductive layers 20 which extend from above the electrodes 22 to the surface of the resin projection 12; and removing the intermediate 32 through a plasma treatment using the conductive layer 20 as a mask, and forming two or more projection electrodes 10. The projection 30 is configured so as to make the length of a profile 32a of the intermediate 32 between the adjacent conductive layers 20 longer than the shortest distance W between the adjacent conductive layers 20. COPYRIGHT: (C)2007,JPO&INPIT