Reverse-blocking semiconductor device manufacture for e.g. actuator, involves activating substrates by laser irradiation, where side wall of trench is formed with angle of inclination of seventy degree

摘要

The method involves forming a trench with a V-shaped or trapezoidal-shape cross section in a principal surface of a conductivity type semiconductor substrate. Another conductivity type semiconductor substrate is introduced into a side wall of the trench. The substrates are activated by laser irradiation, where the side wall of the trench is formed with an angle of inclination of seventy degree or less relative to the principal surface. An independent claim is also included for a semiconductor device comprising a substrate.