| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element having a superjunction structure of low on resistance, and also to provide its fabrication process. <P>SOLUTION: Since a p-type base layer 3 is formed by diffusion on the entire surface of an element portion above a p-type epitaxial layer becoming a p-type pillar layer and then it is divided when a trench 5' is formed and left on the p-type pillar layer 2, diffusion hardly take place in the lateral direction. Consequently, impurity profile of the p-type base layer 3 is flat in the lateral direction. <P>COPYRIGHT: (C)2007,JPO&INPIT |
