| 摘要 |
According to the method of manufacturing a surface acoustic wave device of the invention, since a conductor layer is formed on electrode sections in a state where the entire regions of inter digital transducer and reflectors are covered with an insulating film, the inter digital transducer and the reflectors are protected by the insulating film during formation of the conductor layer. As a result, it is possible to obtain a highly efficient surface acoustic wave device with no sticking of foreign matters to the inter digital transducer and the reflectors.
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