| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of writing data to a semiconductor memory device permitting improvement in reliability of data. <P>SOLUTION: The method is for writing a data at a desired threshold voltage to a 1st memory cell when writing is carried out sequentially to 1st and 2nd memory cells disposed adjacent to each other, in a semiconductor storage device with memory cells for storing the data defined by the threshold voltage in a nonvolatile manner, and the 1st data write operation for writing the data at the threshold voltage lower than the desired threshold voltage into the 1st memory cell is performed, the 2nd data write operation is performed into the 2nd memory cell, then, 3rd data write operation for writing the data at the desired threshold voltage into the 1st memory cell is performed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
