发明名称 |
Method for manufacturing nitride-base semiconductor element and nitride-base semiconductor element |
摘要 |
A principal surface at one side of a support substrate has thereon an adjustment layer made of material having a higher thermal expansion coefficient than that of the support substrate. Then, a nitride-base semiconductor element layer and the support substrate on a growth substrate are joined via an adhesion layer. Next, the support substrate is joined to the nitride-base semiconductor element layer via the adhesion layer. Next, the growth substrate is separated from the joined nitride-base semiconductor element layer and the support substrate.
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申请公布号 |
US2006194360(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20060356964 |
申请日期 |
2006.02.21 |
申请人 |
TAKEUCHI KUNIO;KUNOH YASUMITSU |
发明人 |
TAKEUCHI KUNIO;KUNOH YASUMITSU |
分类号 |
H01L21/00;H01L21/30;H01L33/06;H01L33/08;H01L33/32;H01L33/64 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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