| 摘要 |
A semiconductor device which has a source/drain extension structure suitable for miniaturization, is provided a semiconductor device comprising a gate electrode formed on a semiconductor substrate of a first conductivity type via a gate insulator, a semiconductor region of a second conductivity type comprising first and second semiconductor areas, wherein the first semiconductor area is formed in the semiconductor substrate outside the gate electrode and whose junction depth becomes deeper as apart from the gate electrode, and wherein the second semiconductor area is disposed outside the first semiconductor area and whose junction depth is substantially constant, and an insulator formed to cover a part of the first semiconductor area and in contact with a side face of the gate electrode.
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