| 摘要 |
PROBLEM TO BE SOLVED: To form a high aspect etching pattern without being accompanied with positive-negative reverse or increasing the number of etching steps, to improve etching durability of a photoresist pattern and to prevent line thinning by electron beam irradiation. SOLUTION: The pattern forming method is carried out by applying a pattern forming material containing fullerenes having a phenolic hydroxyl group or a carboxyl group on a photoresist pattern after development so as to deposit a fullerene-containing film on the resist pattern surface, and removing the pattern forming material on a part except the photoresist pattern so as to protect only the photoresist pattern surface with the fullerenes. COPYRIGHT: (C)2006,JPO&NCIPI |
