| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET and a semiconductor device having the FET wherein the heat radiating quality of the heat generated from the FET is improved, and the connections are facilitated whereby a wiring disposed on the side of the substrate of the FET is coupled to the source wiring, the gate wiring, and the drain wiring of the FET. SOLUTION: With respect to the constitution of the semiconductor device in a semiconductor substrate wherein a source, a drain and a gate are so provided as to constitute the field effect transistor, a metal wiring connected with either one of the source, and the drain is so disposed in the form of a plane as to provide a heat radiating surface. Further, a via hole is so provided as to connect by the via hole the drain or the source which is not connected with the metal wiring and an electrode provided in the other surface of the semiconductor substrate, and moreover, the heat radiating surface is so provided as to cover therewith the source, the drain, and the gate. COPYRIGHT: (C)2006,JPO&NCIPI |
