发明名称 |
Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
摘要 |
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. Alternatively, a non-insulating organic layer may be between the top electrode and the charge generating layer. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays. A voltage is applied to the top electrode. This voltage may be within the range of 500 V to 2,000 V.
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申请公布号 |
US2006192131(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20060412396 |
申请日期 |
2006.04.27 |
申请人 |
CHEUNG LAWRENCE;BOGDANOVICH SNEZANA;INGAL ELENA;WILLIAMS CORNELL L |
发明人 |
CHEUNG LAWRENCE;BOGDANOVICH SNEZANA;INGAL ELENA;WILLIAMS CORNELL L. |
分类号 |
G01T1/24 |
主分类号 |
G01T1/24 |
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地址 |
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