发明名称 |
SNSE-BASED LIMITED REPROGRAMMABLE CELL |
摘要 |
<p>Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium comprising material layer and the second electrode.</p> |
申请公布号 |
WO2006091480(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
WO2006US05618 |
申请日期 |
2006.02.17 |
申请人 |
MICRON TECHNOLOGY, INC.;CAMPBELL, KRISTY, A. |
发明人 |
CAMPBELL, KRISTY, A. |
分类号 |
H01L45/00;G11C16/02 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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