| 摘要 |
PROBLEM TO BE SOLVED: To form a liquid ejection head including a semiconductor substrate with high precision. SOLUTION: A semiconductor is fabricated in a silicon substrate 7 and a first wiring layer is formed to serve as a sacrifice layer partially. A silicon oxide film (interlayer insulating film) 13 is formed and a heater 3 is made by forming a heating resistor 14 and a second wiring layer 15. On the sacrifice layer, the second wiring layer 15 is removed to leave only the heating resistor 14. A protective silicon nitride film 16 and a cavitation resistant tantalum film 17 are formed and patterned. A resin substrate 2 is placed on a semiconductor substrate 1 and a supply opening 5 is formed by removing the sacrifice layer. The silicon oxide film 13 of a membrane film in the supply opening 5 is removed by wet etching. The heating resistor 14 serves as an etching stopper layer and the silicon nitride film 16 is not damaged. Remaining part of the membrane film, i.e. the heating resistor 14, and the silicon nitride film 16 are removed by dry etching to form a channel 4 and an ejection opening 6 in the resin substrate 2. COPYRIGHT: (C)2006,JPO&NCIPI
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