发明名称 Electrical-interference-isolated transistor structure
摘要 A transistor structure includes at least one chip; a packaging insulating layer, a first adhesive layer, a conducting layer, and a second adhesive layer sequentially provided on one side of the chip having electrical contacts thereon, so that the conducting layer is bonded between the first and the second adhesive layer; and a leadframe bonded to an outer side of the second adhesive layer. The conducting layer may be a metal sheet, a metal film, or a type of conducting fiber. The leadframe is connected to the electrical contacts on the chip via lead wires, and at least one of the electrical contacts on the chip is connected to the conducting layer via a conductor, so that the conducting layer is able to isolate electrical noises and reduce electromagnetic interferences, improve rates of transmission and heat release, strengthen chip packaging structure, and serve as a common grounding circuit.
申请公布号 US2006125063(A1) 申请公布日期 2006.06.15
申请号 US20050051677 申请日期 2005.02.07
申请人 DOMINTECH CO., LTD. 发明人 TZU CHUNG-HSING
分类号 H01L23/495 主分类号 H01L23/495
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