| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method that allows etching with a high selectivity ratio relative to a photoresist, and a CVD film formation method that allows anα-CF film to be formed at a high deposition rate. SOLUTION: A plasma processing method is used for processing a target object by using plasma of a process gas containing a fluorocarbon compound. A fluorocarbon compound having at least one triple bond within a molecule and a CF<SB>3</SB>group bonded by at least one single bond adjacent to the triple bond, such as 1,1,1,4,4,4-hexafluoro-2-butyne or 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, is used. COPYRIGHT: (C)2006,JPO&NCIPI
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