| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an LCD (liquid crystal display) device in which increase of parasitic capacitance as a whole is suppressed by rendering an a-Si layer including a signal terminal region as an island while suppressing increase of photolithography steps. SOLUTION: Thin resist patterns (73, 74, 76) are formed on signal wiring, signal leader lines, signal terminals, a portion of drain electrodes, and a region to be a portion of source electrodes, and relatively thick resist patterns (71, 72) are formed on a region corresponding to a short distance across a gate electrode width extending from a position where the drain electrode and the source electrode are opposite to each other. The semiconductor layer is rendered as an island (410) by etching a metal layer and a contact layer, while using reflow resist patterns (75, 77) formed by reflowing these resist patterns as a mask. COPYRIGHT: (C)2006,JPO&NCIPI |
