| 发明名称 |
Nonvolatile memory cells with buried channel transistors |
| 摘要 |
In a nonvolatile memory cell ( 110 ), the select gate transistor is formed as a buried channel transistor to increase the transistor current.
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| 申请公布号 |
US2006128097(A1) |
申请公布日期 |
2006.06.15 |
| 申请号 |
US20060348993 |
申请日期 |
2006.02.07 |
| 申请人 |
DING YI |
发明人 |
DING YI |
| 分类号 |
H01L21/336;G11C7/00;G11C16/04;H01L21/8247;H01L27/105;H01L27/115 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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