发明名称 |
READ BIAS SCHEME FOR PHASE CHANGE MEMORIES |
摘要 |
A read bias scheme may be used for phase change memories including a chalcogenide access device and a chalcogenide memory element. Through an appropriate read bias scheme, desirable read margin can be achieved. This may result in better yield, higher reliability, and ultimately lower costs in some cases. |
申请公布号 |
WO2005017907(A2) |
申请公布日期 |
2005.02.24 |
申请号 |
WO2004US24277 |
申请日期 |
2004.07.28 |
申请人 |
INTEL CORPORATION;LOWREY, TYLER;PARKINSON, WARD |
发明人 |
LOWREY, TYLER;PARKINSON, WARD |
分类号 |
G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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