| 摘要 |
PURPOSE:To prevent the generation of a junction capacitance, to contrive accomplishment of a high speed operation, and to suppress the short channel effect caused by microscopic formation of the titled semiconductor device by a method wherein a pocket region and a high density impurity diffusion region are formed in an excellent controllable manner. CONSTITUTION:N-type impurities are implanted using a resist pattern 27 as a mask, and then a spacer 29 is formed on the circumferential side face of the resist pattern 27. N<+> type impurities are implanted using said spacer and resist pattern 27 as a mask, and after the spacer 29 has been removed, gate electrodes 26' and 31 and a P-pocket aperture 32 are formed in a self-matching manner by performing an etching on a polycrystalline silicon film 25 located on the circumference of the resist pattern 27 utilizing the film having the base selective etching property. As a result, P-pocket regions 331 and 332 are formed through the aperture part 32, and the P-pocket regions 331 and 332 can be self- matchingly positioned on the lower part on the side of the channel region of N-type regions 281 and 282 by activating impurities.
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