| 摘要 |
PURPOSE:To protect a bump from oxidation-caused surface degradation, inferior electric characteristics, and reduced mechanical strength by a method wherein the bump is allowed to grow from an opening provided at a prescribed position in a insulating film on a semiconductor substrate, the insulating film is removed, and then metal films are formed on the exposed surface of the bump. CONSTITUTION:A first opening is provided in the upper portion of a pad elec trode 3. Then, metal films 3' and 4' are formed of Ti, Cu, or the like, to cover the pad electrode 3 and locally an insulating film 2 on a semiconductor substrate 1. A photosensitive resin 9 is attached, and another opening is selectively pro vided that is larger than the first opening. The exposed portions of the metal films 3' and 4' are plated for the formation of a bump 6, and then the photosensi tive resin 9 is removed. The exposed portion of the metal film 4, is removed and, on the metal surface only of the bump 6, a first metal layer 7, and then a second metal layer 8 is formed, both by electroless plating. The metal film 3' is removed in a process wherein the bump 6 serves as a mask. In this way, a bump is protected from surface oxidation, degraded electric characteristics, and reduced mechanical strength.
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