| 摘要 |
PURPOSE:To make the film quality of an SiO2 layer uniform and to prevent the quality of a single-crystal insulating layer from deteriorating by a method wherein a part coming into contact with the single-crystal insulating layer of a single-crystal silicon substrate is transformed into a silicon dioxide layer via the single-crystal insulating layer which has been formed on the silicon single-crystal substrate. CONSTITUTION:A single-crystal insulating layer 12 is formed on a single-crystal silicon substrate 11; a single-crystal silicon part coming into contact with the single-crystal insulating film 12 is transformed into a silicon dioxide layer 13 via the single-crystal insulating layer 12. For example; as a material for said single-crystal insulating layer 12, magnesia spinel, sapphire or the like which can grow single-crystal silicon on it and which can be oxidized via it is used; a steam oxidation method is used for the oxidation. A first oxidation process is executed at a low temperature of less than 1100 deg.C and a second oxidation process is executed at a high temperature of less than 1200 deg.C so that the desired film thickness of an oxide layer can be obtained; furthermore, the oxidation process is interrupted temporarily without feeding the steam during a transition process to increase the temperature from said first oxidation process to said second oxidation process.
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